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HCS245MS PDF даташит

Спецификация HCS245MS изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting».

Детали детали

Номер произв HCS245MS
Описание Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCS245MS Даташит, Описание, Даташиты
HCS245MS
December 1992
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Pinouts
20 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
TOP VIEW
DIR 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
20 VCC
19 OE
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
Description
The Intersil HCS245MS is a Radiation Hardened Non-Invert-
ing Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
20 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
TOP VIEW
DIR
A0
A1
A2
A3
A4
A5
A6
A7
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
Truth Table
CONTROL
INPUTS
OE DIR OPERATION
L L B Data to A Bus
L H A Data to B Bus
H X Isolation
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10k
to 1Mresistors.
Functional Diagram
ONE OF 8 TRANSCEIVERS
B DATA
11
(18, 17, 16, 15,
14, 13, 12)
DIR
1
OUTPUT
ENABLE 19
A DATA
9
(2, 3, 4, 5,
6, 7, 8)
TO OTHER
7 BUFFERS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-475
File Number 2468.1









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HCS245MS Даташит, Описание, Даташиты
Specifications HCS245MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Impedance . . . . . . . . . . . . . . . .
θja
Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W
Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W
θjc
16oC/W
12oC/W
Power Dissipation per Package (PD)
For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For TA = +100oC to +125oC Derate Linearly at 13mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Three-State Output
Leakage Current
IOH
VOL
VOH
IIN
IOZ
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
VCC = 5.5V, VIN = VCC or
GND, VCC = 4.5V and
5.5V
Applied Voltage = 0V or
VCC
Noise Immunity
Functional Test
FN VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTE:
1. All voltages reference to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 40
- 750
7.2 -
6.0 -
7.2 -
6.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1
±50
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
µA
µA
-
7-476









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HCS245MS Даташит, Описание, Даташиты
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Data to Output
Enable to Output
Disable to Output
SYMBOL
TPLH
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TPZL
TPZH
VCC = 4.5V
TPLZ
TPHZ
VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
MIN MAX UNITS
2 19 ns
2 23 ns
2 26 ns
2 30 ns
2 28 ns
2 33 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CONDITIONS
CPD
VCC = 5.0V, f = 1MHz
CIN VCC = Open, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
MIN MAX
Typical 45
Typical 45
- 10
- 10
- 12
- 18
UNITS
pF
pF
pF
pF
ns
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Three-State Output
Leakage Current
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
IOZ
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
Applied Voltage = 0V or VCC
TEMP-
ERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
200K RAD
LIMITS
MIN MAX
- 0.75
6.0 -
-6.0 -
- 0.1
VCC
-0.1
-
- ±5
- ±50
1M RAD
LIMITS
MIN MAX
- 3.75
5.0 -
-5.0 -
- 0.1
VCC
-0.1
-
- ±5
- ±100
UNITS
mA
mA
mA
V
V
µA
µA
7-477










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Номер в каталогеОписаниеПроизводители
HCS245MSRadiation Hardened Octal Bus Transceiver/ Three-State/ Non-InvertingIntersil Corporation
Intersil Corporation

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