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HCS373T PDF даташит

Спецификация HCS373T изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal Transparent Latch/ Three-State».

Детали детали

Номер произв HCS373T
Описание Radiation Hardened Octal Transparent Latch/ Three-State
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCS373T Даташит, Описание, Даташиты
Data Sheet
HCS373T
July 1999 File Number 4617.1
Radiation Hardened Octal Transparent
Latch, Three-State
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HCS373T is a Radiation Hardened Octal
Transparent Three-State Latch with an active-low output
enable. The HCS373T utilizes advanced CMOS/SOS
technology. The outputs are transparent to the inputs when
the Latch Enable (LE) is HIGH. When the Latch Enable (LE)
goes LOW, the data is latched. The Output Enable (OE)
controls the three-state outputs. When the Output Enable
(OE) is HIGH, the outputs are in the high impedance state.
The latch operation is independent of the state of the Output
Enable.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HCS373T are
contained in SMD 5962-95792. A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
ORDERING
NUMBER
PART NUMBER
TEMP.
RANGE
(oC)
5962R9579201TRC
HCS373DTR
-55 to 125
5962R9579201TXC
HCS373KTR
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
- Latch-Up Free Under Any Conditions
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9
Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened CMOS SOS
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
• Input Current Levels Ii 5mA at VOL, VOH
Pinouts
HCS373DTR (SBDIP), CDIP2-T20
TOP VIEW
OE 1
Q0 2
D0 3
D1 4
Q1 5
Q2 6
D2 7
D3 8
Q3 9
GND 10
20 VCC
19 Q7
18 D7
17 D6
16 Q6
15 Q5
14 D5
13 D4
12 Q4
11 LE
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
GND
HCS373KTR (FLATPACK), CDFP4-F20
TOP VIEW
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.









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HCS373T Даташит, Описание, Даташиты
HCS373T
Functional Diagram
1 OF 8
(3, 4, 7, 8, 13,
14, 17, 18)
D
COMMON CONTROLS
LE
(11)
LATCH
DQ
LE
OE
(1)
OE
Q
(2, 5, 6, 9, 12,
15, 16, 19)
TRUTH TABLE
OE LE
D
Q
L HHH
LHL L
LL I L
L L hH
HXXZ
H = High Level, L = Low Level.
X = Immaterial, Z = High Impedance.
I = Low voltage level prior to the high-to-low latch enable transition.
h = High voltage level prior to the high-to-low latch enable transition.
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HCS373T Даташит, Описание, Даташиты
Die Characteristics
DIE DIMENSIONS:
(2747µm x 2693µm x 533µm ±51.0µm)
108 x 106 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11kÅ ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
D0
(3)
HCS373T
PASSIVATION:
Type: Silox (SiO2)
Thickness: 13kÅ ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
376
PROCESS:
CMOS SOS
HCS373T
Q0 OE VCC Q7
(2) (1) (20) (19)
D1 (4)
Q1 (5)
Q2 (6)
D2 (7)
(18) D7
(17) D6
(16) Q6
(15) Q5
(14) D5
(8) (9)
Q3
(10) (11)
GND
(12) (13)
Q4 D4
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The
mask series for the HCS373 is TA14303A.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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Номер в каталогеОписаниеПроизводители
HCS373DTRRadiation Hardened Octal Transparent Latch/ Three-StateIntersil Corporation
Intersil Corporation
HCS373KTRRadiation Hardened Octal Transparent Latch/ Three-StateIntersil Corporation
Intersil Corporation
HCS373MSRadiation Hardened Octal Transparent Latch/ Three-StateIntersil Corporation
Intersil Corporation
HCS373TRadiation Hardened Octal Transparent Latch/ Three-StateIntersil Corporation
Intersil Corporation

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