HCTS00HMSR PDF даташит
Спецификация HCTS00HMSR изготовлена «Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Quad 2-Input NAND Gate». |
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Детали детали
Номер произв | HCTS00HMSR |
Описание | Radiation Hardened Quad 2-Input NAND Gate |
Производители | Intersil Corporation |
логотип |
9 Pages
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HCTS00MS
August 1995
Radiation Hardened
Quad 2-Input NAND Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• CMOS Input Compatibility Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS00MS is a Radiation Hardened Quad 2-Input
NAND Gate. A high on both inputs forces the output to a Low
state.
The HCTS00MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS00MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
HCTS00DMSR -55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
B1 2
Y1 3
A2 4
B2 5
Y2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 B3
9 A3
8 Y3
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW
A1
B1
Y1
A2
B2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
B4
A4
Y4
B3
A3
Y3
TRUTH TABLE
INPUTS
OUTPUTS
An Bn Yn
L LH
L HH
HLH
HH L
NOTE: L = Logic Level Low, H = Logic level High
HCTS00KMSR -55oC to +125oC Intersil Class
S Equivalent
HCTS00D/
Sample
+25oC
Sample
HCTS00K/
Sample
+25oC
Sample
HCTS00HMSR
+25oC
Die
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
Functional Diagram
An
(1, 4, 9, 12)
Bn
(2, 5, 10, 13)
Yn
(3, 6, 8, 11)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
370
Spec Number 518774
File Number 2139.2
No Preview Available ! |
Specifications HCTS00MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V,
VIH = 2.25,
VIL = 0.80 (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 10
- 200
4.8 -
4.0 -
-4.8 -
-4.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
-
Spec Number 518774
371
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Specifications HCTS00MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Input to Yn
Input to Yn
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
MIN MAX UNITS
2 18 ns
2 20 ns
2 20 ns
2 22 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = 5.0V, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC
+25oC
+125oC
MIN MAX UNITS
- 38 pF
- 72 pF
- 10 pF
- 10 pF
- 15 ns
- 22 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
Quiescent Current
ICC VCC = 5.5V, VIN = VCC or GND
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V
Output Current
(Source)
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = -50µA
Input Leakage
Current
IIN VCC = 5.5V, VIN = VCC or GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V, (Note 3)
Input to Yn
TPHL VCC = 4.5V
TPLH VCC = 4.5V
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
200K RAD
LIMITS
MIN MAX
- 0.2
4.0 -
-4.0 -
- 0.1
VCC
-0.1
-
-
±5
--
2 20
2 22
UNITS
mA
mA
mA
V
V
µA
-
ns
ns
Spec Number 518774
372
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