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GT40J322 PDF даташит

Спецификация GT40J322 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Insulated Gate Bipolar Transistor».

Детали детали

Номер произв GT40J322
Описание Insulated Gate Bipolar Transistor
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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GT40J322 Даташит, Описание, Даташиты
GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
FRD included between emitter and collector
Enhancement mode type
High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A)
Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
600
± 25
40
100
30
60
120
150
55 to 150
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
Gate
Emitter
TOSHIBA
40J322
Part No. (or abbreviation code)
Lot No.
Note 1
1 2009-08-10









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GT40J322 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
GT40J322
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
Symbol
Test Condition
Min
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth(j-c)
Rth(j-c)
VGE = ±25 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 40 mA, VCE = 5 V
IC = 40 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Resistive Load
VCC = 300 V, IC = 40 A
VGG = ±15 V, RG = 39 Ω
(Note 2)
IF = 30 A, VGE = 0
IF = 30 A, VGE = 0, di/dt = − 100 A/μs
3.0
Typ. Max Unit
1.7
2500
0.20
0.30
0.20
0.50
1.4
± 500
1.0
6.0
2.7
0.40
2.0
0.2
1.04
2.0
nA
mA
V
V
pF
μs
V
μs
°C/W
°C/W
Note 1: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment
Note 2: Switching time measurement circuit and input/output waveforms
VGE
90%
0
RG
0 IC
VCC
90%
0 VCE
10%
tf
toff
10%
10%
90%
tr
ton
2 2009-08-10









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GT40J322 Даташит, Описание, Даташиты
Common emitter
Tc = 25°C
IC – VCE
GT40J322
VCE – VGE
Common emitter
Tc = -40°C
Collector-emitter voltage VCE (V)
VCE – VGE
Common emitter
Tc = 25°C
Gate-emitter voltage VGE (V)
VCE – VGE
Common emitter
Tc = 125°C
Gate-emitter voltage VGE (V)
Common emitter
VCE = 5 V
IC – VGE
Gate-emitter voltage VGE (V)
Common emitter
VGE = 15 V
VCE (sat) – Tc
Gate-emitter voltage VGE (V)
Case temperature Tc (°C)
3 2009-08-10










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Номер в каталогеОписаниеПроизводители
GT40J321Insulated Gate Bipolar TransistorToshiba Semiconductor
Toshiba Semiconductor
GT40J322Insulated Gate Bipolar TransistorToshiba Semiconductor
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