NRVUD550PFT4G PDF даташит
Спецификация NRVUD550PFT4G изготовлена «ON Semiconductor» и имеет функцию, называемую «SWITCHMODE Power Rectifier». |
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Детали детали
Номер произв | NRVUD550PFT4G |
Описание | SWITCHMODE Power Rectifier |
Производители | ON Semiconductor |
логотип |
8 Pages
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MUR550APFG,
MURD550PFG,
MUR550PFG,
MURF550PFG,
NRVUD550PFT4G
SWITCHMODE
Power Rectifier
These state−of−the−art devices are designed for power factor
correction in discontinuous and critical conduction mode.
Features
520 V Rating Meets 80% Derating Requirements of Major OEMs
Low Forward Voltage Drop
Low Leakage
Ultrafast 95 Nanosecond Recovery Time
Reduces Forward Conduction Loss
AEC−Q101 Qualified and PPAP Capable
NRVUD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Applications
DCM PFC Designs
Switching Power Supplies
Power Inverters
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: MUR550APFG: 1.1 Gram (Approximately)
MURD550PFG, NRVUD550PFT4G: 0.4 Gram
(Approximately)
MUR550PFG, MURF550PFG: 1.9 Gram
(Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
http://onsemi.com
ULTRAFAST RECTIFIER
5.0 AMPERES, 520 VOLTS
MARKING DIAGRAMS
AXIAL LEAD
CASE 267
STYLE 1
A
MUR
550APF
YYWW G
G
12
3
DPAK
4 CASE 369C
STYLE 8
1
4
3
Pin 1: No Connect
AYWW
U
550G
1
3
4
TO−220AC
CASE 221B
STYLE 1
1
4
3
AY WWG
MUR550PF
KA
4
TO−220FP
CASE 221E
STYLE 1
1
3
1
3
AYWWG
4 MURF550PF
KA
A
YY, Y
WW
G or G
KA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
(Note: Microdot may be in either location)
Publication Order Number:
MUR550/D
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MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G
ORDERING INFORMATION
Device
Package
Shipping†
MUR550APFG
Axial
500 Units/Bag
MUR550APFRLG
Axial
1,500 Tape & Reel
MURD550PFT4G
DPAK
(Pb−Free)
2,500 Tape & Reel
NRVUD550PFT4G
DPAK
(Pb−Free)
2,500 Tape & Reel
MUR550PFG
TO−220AC
(Pb−Free)
50 Units/Rail
MURF550PFG
TO−220FP
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 65C
(Rated VR) TC = 160C
MUR550APFG
MURD550PFG, NRVUD550PFT4G,
MUR550PFG, MURF550PFG
VRRM
VRWM
VR
IF(AV)
520
5.0
5.0
V
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
MUR550APFG
NRVUD550PFT4G, MURD550PFG
MUR550PFG, MURF550PFG
IFSM
85
75
100
A
Operating Junction Temperature Range
Storage Temperature Range
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
ESD
−65 to +175
−65 to +175
> 400
> 8000
C
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case (Note 1)
MURD550PG, MUR550PFG, NRVUD550PFT4G
MURF550PFG
Thermal Resistance, Junction−to−Ambient
MUR550APFG
NRVUD550PFT4G, MURD550PFG (Note 3), MURF550PFG
1. Rating applies when surface mounted on the minimum pad sizes recommended.
2. See Note 2, Ambient Mounting Data.
3. 1 inch square pad size on FR4 board.
Symbol
RqJC
RqJA
Value
2.8
5.75
Note 2
62
75
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 4)
(IF = 5.0 A, TJ = 25C)
(IF = 5.0 A, TJ = 150C)
Maximum Instantaneous Reverse Current (Note 4)
(VR = 520 V, TJ = 25C)
(VR = 520 V, TJ = 150C)
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25C)
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
VF
IR
trr
Value
1.15
0.98
5.0
400
95
Unit
V
mA
ns
http://onsemi.com
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MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G
NOTE 2 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction−to−ambient
(RqJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR
Mounting
Method
1
2 RqJA
3
Lead Length, L (IN)
1/8 1/4 1/2 3/4
50 51 53 55
58 59 61 63
28
Units
C/W
C/W
C/W
MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.
LL
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
Vector Push−In Terminals T−28
LL
ÉÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 3
P.C. Board with
1−1/2 x 1−1/2 Copper Surface
ÉÉ L = 1/2
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ Board Ground Plane
http://onsemi.com
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Номер в каталоге | Описание | Производители |
NRVUD550PFT4G | SWITCHMODE Power Rectifier | ON Semiconductor |
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