DataSheet26.com

NRVUD620CTT4G PDF даташит

Спецификация NRVUD620CTT4G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «SWITCHMODE Power Rectifier».

Детали детали

Номер произв NRVUD620CTT4G
Описание SWITCHMODE Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

5 Pages
scroll

No Preview Available !

NRVUD620CTT4G Даташит, Описание, Даташиты
MURD620CTG,
MURD620CTT4G,
NRVUD620CTG,
NRVUD620CTT4G
SWITCHMODE
Power Rectifier
DPAK Surface Mount Package
These stateoftheart devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 35 Nanosecond Recovery Time
Low Forward Voltage Drop
Low Leakage
ESD Rating:
Human Body Model = 3B (> 8 kV)
Machine Model = C (> 400 V)
NRVUD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
ULTRAFAST RECTIFIER
6.0 AMPERES
200 VOLTS
DPAK
CASE 369C
1
4
3
MARKING DIAGRAM
AYWW
U
620TG
A
Y
WW
U620T
G
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MURD620CTG
DPAK
75 Units / Rail
(PbFree)
NRVUD620CTG
DPAK
75 Units / Rail
(PbFree)
MURD620CTT4G
DPAK
(PbFree)
2,500 /
Tape & Reel
NRVUD620CTT4G
DPAK
(PbFree)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 11
1
Publication Order Number:
MURD620CT/D









No Preview Available !

NRVUD620CTT4G Даташит, Описание, Даташиты
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Per Diode
Per Device
Rating
Symbol
VRRM
VRWM
VR
IF(AV)
Value
200
3.0
6.0
Unit
V
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 145°C)
Per Diode
IF A
6.0
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
IFSM
50
A
Operating Junction and Storage Temperature Range
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient (Note 1)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
Symbol
RqJC
RqJA
Value
9
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF = 3 Amps, TC = 25°C)
(iF = 3 Amps, TC = 125°C)
(iF = 6 Amps, TC = 25°C)
(iF = 6 Amps, TC = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(TJ = 25°C, Rated dc Voltage)
(TJ = 125°C, Rated dc Voltage)
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
iR
trr
Value
1
0.96
1.2
1.13
5
250
35
25
Unit
V
mA
ns
http://onsemi.com
2









No Preview Available !

NRVUD620CTT4G Даташит, Описание, Даташиты
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
100 100
70
TJ = 175°C
10
50
1 150°C
100°C
30 0.1
20
0.01
25°C
10 0.001
7.0
5.0
3.0
175°C
TJ = 25°C
2.0
150°C
100°C
1.0
0.7
0.5
0.3
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage (Per Leg)
8.0
RATED VOLTAGE APPLIED
7.0 RqJC = 9°C/W
6.0
TJ = 175°C
5.0
dc
4.0
SINE WAVE
3.0 OR
SQUARE WAVE
2.0
1.0
0.0001 0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Leakage Current* (Per Leg)
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficiently below rated
VR.
14
13 5.0 SINE
12 10 WAVE
11
10 IPK/IAV = 20
9.0
8.0
dc
7.0 SQUARE
6.0 WAVE
5.0
4.0
3.0
2.0
1.0
0
0
TJ = 175°C
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 3. Average Power Dissipation (Per Leg)
4.0
3.5
RATED VOLTAGE APPLIED
RqJA = 80°C/W
3.0
SURFACE MOUNTED ON
2.5 MIN. PAD SIZE RECOMMENDED
2.0
dc
1.5
1.0 SINE WAVE
OR
0.5 SQUARE WAVE
TJ = 175°C
0
100 110 120 130 140 150 160 170 180
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case (Per Leg)
0
0 20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient (Per Leg)
http://onsemi.com
3










Скачать PDF:

[ NRVUD620CTT4G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NRVUD620CTT4GSWITCHMODE Power RectifierON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск