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HCTS190D PDF даташит

Спецификация HCTS190D изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Synchronous 4-Bit Up/Down Counter».

Детали детали

Номер произв HCTS190D
Описание Radiation Hardened Synchronous 4-Bit Up/Down Counter
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCTS190D Даташит, Описание, Даташиты
HCTS190MS
September 1995
Radiation Hardened
Synchronous 4-Bit Up/Down Counter
Features
Description
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA @ VOL, VOH
The Intersil HCTS190MS is an asynchronously presettable
BCD Decade synchronous counter. Presetting the counter to
the number on the preset data inputs (P0 - P3) is accom-
plished by a low on the parallel load input (PL). Counting
occurs when (PL) is high, Count Enable (CE) is low and the
Up/Down (U/D) input is either low for up-counting or high for
down-counting. The counter is incremented or decremented
synchronously with the low-to-high transition of the clock.
When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting,
goes high and remains high for one clock cycle. This output
can be used for look-ahead carry in high speed cascading.
The TC output also initiates the Ripple Clock output (RC)
which, normally high, goes low and remains low for the low-
level portion of the clock pulse. These counter can be cas-
caded using the Ripple Carry output.
If the decade counter is preset to an illegal state or assumes
an illegal state when power is applied, it will return to the
normal sequence in one or two counts
The HCTS190MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCTS190DMSR
HCTS190KMSR
HCTS190D/Sample
HCTS190K/Sample
HCTS190HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
P1 1
Q1 2
Q0 3
CE 4
U/D 5
Q2 6
Q3 7
GND 8
16 VCC
15 P0
14 CP
13 RC
12 TC
11 PL
10 P2
9 P3
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
P1
Q1
Q0
CE
U/D
Q2
Q3
GND
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
VCC
P0
CP
RC
TC
PL
P2
P3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518614
File Number 2474.2









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HCTS190D Даташит, Описание, Даташиты
Functional Diagram
15 P0
PL
11
U/D
5
1 P1
HCTS190MS
10 P2
9 P3
PL
P
Q
T
CP Q
FF0
PL
P
Q
T
CP Q
FF1
PL
P
Q
T
CP Q
FF2
CE
4
CP
14
3 Q0
2 Q1
TRUTH TABLE
FUNCTION
P; CE
Count Up
HL
Count Down
HL
Asynchronous Preset
LX
No Change
HH
H = High Level
L = Low Level
X = Immaterial
= Transition from low to high
NOTE: U/D or CE should be changed only when clock is high.
6 Q2
U/D
L
H
X
X
PL
P
Q
T
CP Q
FF3
Q3
7
TC
12
13
RC
CP
X
X
Spec Number 518614
2









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HCTS190D Даташит, Описание, Даташиты
Specifications HCTS190MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage(VCC) . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times @ 4.5 VCC (TR, TF) . . . . . . . .500ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH =2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 40 µA
- 750 µA
4.8 - mA
4.0 - mA
-4.8 - mA
-4.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
V
V
µA
µA
-
Spec Number 518614
3










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Номер в каталогеОписаниеПроизводители
HCTS190DRadiation Hardened Synchronous 4-Bit Up/Down CounterIntersil Corporation
Intersil Corporation
HCTS190DMSRRadiation Hardened Synchronous 4-Bit Up/Down CounterIntersil Corporation
Intersil Corporation
HCTS190HMSRRadiation Hardened Synchronous 4-Bit Up/Down CounterIntersil Corporation
Intersil Corporation
HCTS190KRadiation Hardened Synchronous 4-Bit Up/Down CounterIntersil Corporation
Intersil Corporation

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