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C1360 PDF даташит

Спецификация C1360 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC1360».

Детали детали

Номер произв C1360
Описание NPN Transistor - 2SC1360
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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C1360 Даташит, Описание, Даташиты
Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s Features
q High transition frequency fT.
q Large collector power dissipation PC.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SC1360
base voltage 2SC1360A
Collector to 2SC1360
emitter voltage 2SC1360A
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
50
60
45
60
4
50
1
150
–55 ~ +150
Unit
V
V
V
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base 2SC1360
voltage
2SC1360A
ICBO
VCBO
VCB = 20V, IE = 0
IC = 100µA, IE = 0
100 nA
50
V
60
Collector to emitter 2SC1360
voltage
VCEO
2SC1360A
IC = 1mA, IB = 0
45
60
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
VEBO
hFE
VCE(sat)
fT
Cre
PG
IE = 100µA, IC = 0
VCB = 10V, IE = –10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 100MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 58MHz
4
20
300
22
V
100
0.4 V
MHz
1.5 pF
30 dB
1









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C1360 Даташит, Описание, Даташиты
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3 Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
3.0
IE=0
f=1MHz
Ta=25˚C
2.5
2.0
1.5
1.0
0.5
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
80
70
IB=2.0mA
1.8mA
60
1.6mA
50 1.4mA
40 1.2mA
1.0mA
30
0.8mA
20 0.6mA
0.4mA
10 0.2mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
hFE — IC
120
VCE=10V
100
80
Ta=75˚C
60
25˚C
–25˚C
40
20
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cre — VCE
–2.4
–2.0
IC=1mA
f=10.7MHz
Ta=25˚C
–1.6
–1.2
– 0.8
– 0.4
0
13
10 30 100
Collector to emitter voltage VCE (V)
2SC1360, 2SC1360A
IC — VBE
60
25˚C
VCE=10V
50
Ta=75˚C –25˚C
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
600
VCB=10V
Ta=25˚C
500
400
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
PG — IE
30
VCB=10V
f=58MHz
Ta=25˚C
25
20
15
10
5
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2










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