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HCTS20D PDF даташит

Спецификация HCTS20D изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Dual 4-Input NAND Gate».

Детали детали

Номер произв HCTS20D
Описание Radiation Hardened Dual 4-Input NAND Gate
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCTS20D Даташит, Описание, Даташиты
HCTS20MS
September 1995
Radiation Hardened
Dual 4-Input NAND Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input
NAND Gate. A low on any input forces the output to a High state.
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL
PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14
TOP VIEW
A1 1
B1 2
NC 3
C1 4
D1 5
Y1 6
GND 7
14 VCC
13 D2
12 C2
11 NC
10 B2
9 A2
8 Y2
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-183S CDFP3-F14
TOP VIEW
A1
B1
NC
C1
D1
Y1
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
D2
C2
NC
B2
A2
Y2
The HCTS20MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS20MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
Functional Diagram
An
Bn
Yn
PART
NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
Cn
HCTS20DMSR -55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
Dn
HCTS20KMSR -55oC to +125oC Intersil Class
S Equivalent
HCTS20D/
Sample
+25oC
Sample
HCTS20K/
Sample
+25oC
Sample
HCTS20HMSR
+25oC
Die
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
TRUTH TABLE
INPUTS
OUTPUTS
An Bn Cn Dn
Yn
LXXX
H
XLXX
H
XXLX
H
XXXL
H
HHHH
L
NOTE: L = Logic Level Low, H = Logic level High, X = Don’t Care
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
420
Spec Number 518619
File Number 3051.1









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HCTS20D Даташит, Описание, Даташиты
Specifications HCTS20MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 10 µA
- 200 µA
4.8 - mA
4.0 - mA
-4.8 - mA
-4.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
V
V
µA
µA
-
Spec Number 518619
421









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HCTS20D Даташит, Описание, Даташиты
Specifications HCTS20MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Input to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TPLH VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
MIN MAX UNITS
2 18 ns
2 20 ns
2 20 ns
2 22 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = 5.0V, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
MIN MAX UNITS
- 60 pF
- 120 pF
- 10 pF
- 10 pF
- 15 ns
- 22 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
Input to Output
SYMBOL
(NOTES 1, 2)
CONDITIONS
ICC VCC = 5.5V, VIN = VCC or GND
IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2V,
VIL = 0.80V RAD, IOL = 50µA
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2V,
VIL = 0.8V , IOH = -50µA
IIN VCC = 5.5V, VIN = VCC or GND
FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
TPHL VCC = 4.5V
TPLH VCC = 4.5V
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
200K RAD
LIMITS
MIN MAX
- 0.2
4.0 -
-4.0 -
- 0.1
VCC
-0.1
-
-
-
±5
-
2 20
2 22
UNITS
mA
mA
mA
V
V
µA
V
ns
ns
Spec Number 518619
422










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Номер в каталогеОписаниеПроизводители
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