|
|
PDF NCE3010S Data sheet ( Hoja de datos )
| Número de pieza | NCE3010S | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCEPOWER | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NCE3010S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
http://www.ncepower.com
Pb Free Product
NCE3010S
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3010S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =10A
RDS(ON) < 13.5mΩ @ VGS=10V
RDS(ON) < 20mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3010S
NCE3010S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID (100℃)
IDM
PD
TJ,TSTG
Limit
30
±20
10
6
50
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TA=25℃unless otherwise noted)
50 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE3010S
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperatur
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE3010S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NCE3010S | N-Channel Enhancement Mode Power MOSFET | NCEPOWER |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |