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HCTS244D PDF даташит

Спецификация HCTS244D изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal Buffer/Line Driver/ Three-State».

Детали детали

Номер произв HCTS244D
Описание Radiation Hardened Octal Buffer/Line Driver/ Three-State
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCTS244D Даташит, Описание, Даташиты
HCTS244MS
September 1995
Radiation Hardened
Octal Buffer/Line Driver, Three-State
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)/s
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS244MS is a Radiation Hardened Non-
Inverting Octal Buffer/Line Driver, Three-State, with two
active-low output enables.
The HCTS244MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS244MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE 1 1
A0 1 2
Y3 2 3
A1 1 4
Y2 2 5
A2 1 6
Y1 2 7
A3 1 8
Y0 2 9
GND 10
20 VCC
19 2 OE
18 1 Y0
17 2 A3
16 1 Y1
15 2 A2
14 1 Y2
13 2 A1
12 1 Y3
11 2 A0
OE 1
A0 1
Y3 2
A1 1
Y2 2
A2 1
Y1 2
A3 1
Y0 2
GND
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
2 OE
1 Y0
2 A3
1 Y1
2 A2
1 Y2
2 A1
1 Y3
2 A0
Ordering Information
PART NUMBER
HCTS244DMSR
HCTS244KMSR
HCTS244D/Sample
HCTS244K/Sample
HCTS244HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
602
Spec Number 518616
File Number 2133.2









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HCTS244D Даташит, Описание, Даташиты
HCTS244MS
Functional Diagram
1Y0 1Y1 1Y2 1Y3 2Y0 2Y1 2Y2 2Y3
18 16
14 12
9
75
3
N PN P N PN P P N PN P N PN
1
1OE
2 4 6 8 11 13 15 17
1A0 1A1
1A2 1A3 2A0 2A1
2A2 2A3
TRUTH TABLE
INPUTS
1OE, 2OE
A
LL
LH
HX
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
OUTPUT
Y
L
H
Z
19
2OE
Spec Number 518616
603









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HCTS244D Даташит, Описание, Даташиты
Specifications HCTS244MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Three-State Output
Leakage Current
IOZ Applied Voltage = 0V or
VCC, VCC = 5.5V
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 40
- 750
7.2 -
6.0 -
-7.2 -
-6.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1
±50
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
µA
µA
-
Spec Number 518616
604










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Номер в каталогеОписаниеПроизводители
HCTS244DRadiation Hardened Octal Buffer/Line Driver/ Three-StateIntersil Corporation
Intersil Corporation
HCTS244DMSRRadiation Hardened Octal Buffer/Line Driver/ Three-StateIntersil Corporation
Intersil Corporation
HCTS244DTRRadiation Hardened Octal Buffer/Line Driver/ Three-StateIntersil Corporation
Intersil Corporation
HCTS244HMSRRadiation Hardened Octal Buffer/Line Driver/ Three-StateIntersil Corporation
Intersil Corporation

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