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PDF HCTS244MS Data sheet ( Hoja de datos )
| Número de pieza | HCTS244MS | |
| Descripción | Radiation Hardened Octal Buffer/Line Driver/ Three-State | |
| Fabricantes | Intersil Corporation | |
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HCTS244MS
September 1995
Radiation Hardened
Octal Buffer/Line Driver, Three-State
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)/s
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS244MS is a Radiation Hardened Non-
Inverting Octal Buffer/Line Driver, Three-State, with two
active-low output enables.
The HCTS244MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS244MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE 1 1
A0 1 2
Y3 2 3
A1 1 4
Y2 2 5
A2 1 6
Y1 2 7
A3 1 8
Y0 2 9
GND 10
20 VCC
19 2 OE
18 1 Y0
17 2 A3
16 1 Y1
15 2 A2
14 1 Y2
13 2 A1
12 1 Y3
11 2 A0
OE 1
A0 1
Y3 2
A1 1
Y2 2
A2 1
Y1 2
A3 1
Y0 2
GND
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
2 OE
1 Y0
2 A3
1 Y1
2 A2
1 Y2
2 A1
1 Y3
2 A0
Ordering Information
PART NUMBER
HCTS244DMSR
HCTS244KMSR
HCTS244D/Sample
HCTS244K/Sample
HCTS244HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
602
Spec Number 518616
File Number 2133.2
1 page  
Specifications HCTS244MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
Quiescent Current
ICC VCC = 5.5V, VIN = VCC or GND
Output Current (Sink)
IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
Output Current
(Source)
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
Three-State Output
Leakage Current
IOZ Applied Voltage = 0V or VCC, VCC = 5.5V
Input Leakage Current
IIN VCC = 5.5V, VIN = VCC or GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
Propagation Delay Data
to Output
TPLH
VCC = 4.5V
Data to Output
TPHL VCC = 4.5V
Enable to Output
TPZL VCC = 4.5V
Enable to Output
TPZH VCC = 4.5V
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
TEMPERATURE
+25oC
+25oC
200K RAD
LIMITS
MIN MAX UNITS
- 0.75 mA
6.0 - mA
+25oC
-6.0 - mA
+25oC
- 0.1 V
+25oC
+25oC
VCC
-0.1
-
-
±50
V
µA
+25oC
+25oC
- ±5 µA
---
+25oC
2 20 ns
+25oC
+25oC
+25oC
+25oC
2 26
2 32 ns
2 25 ns
2 25 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC 5 12µA
IOL/IOH
5 -15% of 0 Hour
IOZL/IOZH
5 ±200nA
Spec Number 518616
606
5 Page | ||
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| PDF Descargar | [ Datasheet HCTS244MS.PDF ] | |
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