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HCTS245K PDF даташит

Спецификация HCTS245K изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting».

Детали детали

Номер произв HCTS245K
Описание Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCTS245K Даташит, Описание, Даташиты
HCTS245MS
September 1995
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS245MS is a Radiation Hardened Non-
Inverting Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCTS245MS allows data transmission
from the A bus to the B bus or from the B bus to the A bus.
The logic level at the direction input (DIR) determines the
data direction. The output enable input (OE) puts the I/O port
in the high-impedance state when high.
The HCTS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS245MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
DIR 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
20 VCC
19 OE
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
DIR
A0
A1
A2
A3
A4
A5
A6
A7
GND
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
Ordering Information
PART NUMBER
HCTS245DMSR
HCTS245KMSR
HCTS245D/Sample
HCTS245K/Sample
HCTS245HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
614
Spec Number 518615
File Number 2360.2









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HCTS245K Даташит, Описание, Даташиты
HCTS245MS
Functional Diagram
B DATA
11
(18, 17, 16, 15,
14, 13, 12)
ONE OF 8 TRANSCEIVERS
P
N
P
N
A DATA
9
(2, 3, 4, 5,
6, 7, 8)
TO OTHER
7 CIRCUITS
DIR
1
OUTPUT
ENABLE 19
TRUTH TABLE
CONTROL
INPUTS
OE DIR OPERATION
L L B Data to A Bus
L H A Data to B Bus
H X Isolation
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation) modes, all I/O terminals
should be terminated with 10kto 1Mresistors.
Spec Number 518615
615









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HCTS245K Даташит, Описание, Даташиты
Specifications HCTS245MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Three-State Output
Leakage Current
IOZ VCC = 5.5V, Applied
Voltage = 0V or VCC
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 40 µA
- 750 µA
7.2 - mA
6.0 - mA
-7.2 - mA
-6.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1
±50
-
V
V
µA
µA
µA
µA
-
Spec Number 518615
616










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Номер в каталогеОписаниеПроизводители
HCTS245DRadiation Hardened Octal Bus Transceiver/ Three-State/ Non-InvertingIntersil Corporation
Intersil Corporation
HCTS245DMSRRadiation Hardened Octal Bus Transceiver/ Three-State/ Non-InvertingIntersil Corporation
Intersil Corporation
HCTS245DTRRadiation Hardened Octal Bus Transceiver/ Three-State/ Non-InvertingIntersil Corporation
Intersil Corporation
HCTS245HMSRRadiation Hardened Octal Bus Transceiver/ Three-State/ Non-InvertingIntersil Corporation
Intersil Corporation

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