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HCTS374T PDF даташит

Спецификация HCTS374T изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered».

Детали детали

Номер произв HCTS374T
Описание Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCTS374T Даташит, Описание, Даташиты
HCTS365MS
September 1995
Radiation Hardened
Hex Buffer/Line Driver Non-Inverting
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs: 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
OE1 1
A1 2
Y1 3
A2 4
Y2 5
A3 6
Y3 7
GND 8
16 VCC
15 OE2
14 A6
13 Y6
12 A5
11 Y5
10 A4
9 Y4
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA @ VOL, VOH
Description
The Intersil HCTS365MS is a Radiation Hardened non-
inverting hex buffer and line driver with Tri-state outputs. The
output enables (OE1 and OE2) control the three-state out-
puts. If either OE1 or OE2 is high the outputs will be in a
High impedance state. For Data, OE1 and OE2 must be
Low.
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
OE1
A1
Y1
A2
Y2
A3
Y3
GND
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
VCC
OE2
A6
Y6
A5
Y5
A4
Y4
The HCTS365MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
PART NUMBER
HCTS365DMSR
HCTS365KMSR
HCTS365D/Sample
HCTS365K/Sample
HCTS365HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518637
File Number 3070.1









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HCTS374T Даташит, Описание, Даташиты
Functional Diagram
2
1A
1
OE1
15
OE2
HCTS365MS
XX
ONE OF THE IDENTICAL CIRCUITS
3
1Y
4
2A
6
2A
10
2A
12
2A
14
2A
GND
8
3
27
7
27
9
27
11
27
13
27
OE1
L
L
X
H
TRUTH TABLE
INPUTS
OE2
A
LL
LH
HX
XX
OUTPUTS
Y
L
H
Z
Z
Spec Number 518637
2









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HCTS374T Даташит, Описание, Даташиты
Specifications HCTS365MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V (TR, TF) . . . . . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
Quiescent Current
ICC VCC = 5.5V,
VIN = VCC or GND
1
2, 3
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0
1
2, 3
Output Current
(Source)
IOH VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
2, 3
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
1, 2, 3
VCC = 5.5V, VIH =2.75V,
IOH = -50µA, VIL = 0.8V
1, 2, 3
Input Leakage
Current
IIN VCC = 5.5V, VIN = VCC or
1
GND
2, 3
Three-State Output
Leakage Current
IOZ VCC = 5.5V,
1
Applied Voltage = 0V or VCC
2, 3
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V, 7, 8A, 8B
VIL = 0.8V (Note 2)
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 40
- 750
7.2 -
6.0 -
-7.2 -
-6.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1
±50
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
µA
µA
-
Spec Number 518637
3










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