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даташит IRFB3004GPbF PDF ( Datasheet )

IRFB3004GPbF Datasheet Download - International Rectifier

Номер произв IRFB3004GPbF
Описание Power MOSFET
Производители International Rectifier
логотип International Rectifier логотип 



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IRFB3004GPbF Даташит, Описание, Даташиты
PD - 96237
IRFB3004GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.4m
1.75m
c340A
S ID (Package Limited) 195A
D
DS
G
TO-220AB
IRFB3004GPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
jkJunction-to-Case
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
www.irf.com
D
Drain
Max.
™340
™240
195
1310
380
2.5
± 20
4.4
-55 to + 175
300
x x10lbf in (1.1N m)
S
Source
Units
A
W
W/°C
V
V/ns
°C
300
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
mJ
A
mJ
Units
°C/W
1
06/29/09







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IRFB3004GPbF Даташит, Описание, Даташиты
IRFB3004GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
40 ––– ––– V VGS = 0V, ID = 250µA
d––– 0.037 ––– V/°C Reference to 25°C, ID = 5mA
g––– 1.4 1.75 mVGS = 10V, ID = 195A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 2.2 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
1170
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)
–––
hEffective Output Capacitance (Time Related)
–––
–––
160
40
68
92
23
220
90
130
9200
2020
1340
2440
2690
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 195A
nC ID = 187A
gVDS =20V
VGS = 10V
ID = 187A, VDS =0V, VGS = 10V
ns VDD = 26V
ID = 195A
gRG = 2.7
VGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 32V , See Fig. 11
hVGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 340 A MOSFET symbol
D
showing the
––– ––– 1310 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 195A, VGS = 0V
S
––– 27 ––– ns TJ = 25°C
VR = 34V,
––– 31 –––
TJ = 125°C
––– 18 ––– nC TJ = 25°C
gIF = 195A
di/dt = 100A/µs
––– 41 –––
TJ = 125°C
––– 1.2 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 930A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.016mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C.
‰ RθJC value shown is at time zero
above this value .
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IRFB3004GPbF Даташит, Описание, Даташиты
10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
100 4.5V
10
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
IRFB3004GPbF
4.5V
100
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 187A
12.0
10.0
8.0
VDS= 32V
VDS= 20V
6.0
4.0
2.0
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3










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