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PDF NVD5805N Data sheet ( Hoja de datos )
| Número de pieza | NVD5805N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5805N, NVD5805N
Power MOSFET
40 V, 51 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• LED Backlight Driver
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
(CNuortreen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
51
36
47
85
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 30 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.1 mH, VDS = 40 V)
EAS
80 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
3.2 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
16 mW @ 5.0 V
9.5 mW @ 10 V
D
ID MAX
51 A
G
S
N−CHANNEL MOSFET
4
12
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5805N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 4
1
Publication Order Number:
NTD5805N/D
1 page  
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
10
D = 0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 12. Thermal Response
0.1
1
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5805NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5805NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD5805N.PDF ] | |
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