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NVD5807N PDF даташит

Спецификация NVD5807N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5807N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5807N Даташит, Описание, Даташиты
NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable − NVD5807N
These Devices are Pb−Free and are RoHS Compliant
Applications
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
23
16
33
45
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 23 A
Single Pulse Drain−to−Source Avalanche
EAS 29.4 mJ
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
4.5 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
37 mW @ 4.5 V
31 mW @ 10 V
D
ID MAX
16 A
23 A
G
S
N−CHANNEL MOSFET
44
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
2
IPAK
3 CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5807N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 5
1
Publication Order Number:
NTD5807N/D









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NVD5807N Даташит, Описание, Даташиты
NTD5807N, NVD5807N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 5.0 A
VGS = 4.5 V, ID = 4.0 A
VDS = 10 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 20 V,
ID = 5.0 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
VGS = 10 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 150°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.4
Typ Max Unit
V
38 mV/°C
1.0
100
±100
mA
nA
2.5 V
−5.8 mV/°C
20 31 mW
29 37
8.1 S
603 pF
96
73
12.6 20 nC
0.76
2.2
3.1
11.2 ns
111
11.2
3.2
6.7 ns
20.4
15.6
2.0
0.91
0.76
15.7
10.75
5.0
6.1
1.2
V
ns
nC
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NVD5807N Даташит, Описание, Даташиты
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
45
10 V
40
35
VGS = 5 V
TJ = 25°C
4.5 V
30 4.2 V
25 4.0 V
20 3.8 V
15
3.4 V
10
5
0
012
34
3.0 V
56
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
50
VDS 10 V
40
30
TJ = 25°C
20
TJ = 150°C
10
0 TJ = −55°C
23 4 5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.025
0.023
VGS = 10 V
0.021
0.019
0.017
0.015
5
10
TJ = 25°C
15
20
0.040
0.038
0.036
0.034
0.032
0.030
0.028
0.026
0.024
0.022
0.020
0.018
0.016
25 5
TJ = 25°C
10 15
VGS = 4.5 V
VGS = 10 V
20 25 30 35 40 45
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 5 A
1.6 VGS = 10 V
1.5
10,000
VGS = 0 V
1,000
TJ = 150°C
1.4 100
1.3
1.2
1.1 10
1.0 TJ = 25°C
0.9 1.0
0.8
0.7 0.1
−50 −25 0 25 50 75 100 125 150 175
2
12
22 32 42
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVD5807NPower MOSFET ( Transistor )ON Semiconductor
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