DataSheet26.com

HCTS574HMSR PDF даташит

Спецификация HCTS574HMSR изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered».

Детали детали

Номер произв HCTS574HMSR
Описание Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Производители Intersil Corporation
логотип Intersil Corporation логотип 

11 Pages
scroll

No Preview Available !

HCTS574HMSR Даташит, Описание, Даташиты
HCTS574MS
August 1995
Radiation Hardened Octal D-Type
Flip-Flop, Three-State, Positive Edge Triggered
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver O11utputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS574MS is a Radiation Hardened non-inverting
octal D-type, positive edge triggered flip-flop with three-stateable
outputs. The HCTS574MS utilizes advanced CMOS/SOS
technology. The eight flip-flops enter data into their registers on
the LOW-to-HIGH transition of the clock (CP). Data is also
transferred to the outputs during this transition. The output
enable (OE) controls the three-state outputs and is independent
of the register operation. When the output enable is high, the
outputs are in the high impedance state.
The HCTS574MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
OE
D0
D1
D2
Q3
Q4
D5
D6
Q7
GND
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE 1
D0 2
D1 3
D2 4
D3 5
D4 6
D5 7
D6 8
D7 9
GND 10
20 VCC
19 Q0
18 Q1
17 Q2
16 Q3
15 Q4
14 Q5
13 Q6
12 Q7
11 CP
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
The HCTS574MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
VCC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
CP
Ordering Information
PART NUMBER
HCTS574DMSR
HCTS574KMSR
HCTS574D/Sample
HCTS574K/Sample
HCTS574HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
694
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
Spec Number 518629
File Number 2359.2









No Preview Available !

HCTS574HMSR Даташит, Описание, Даташиты
Functional Diagram
HCTS574MS
1 OF 8
FF
D
COMMON CONTROLS
DQ
CP
CP
OE
Q
CE
TRUTH TABLE
INPUTS
OUTPUTS
OE CP Dn Qn
L HH
L LL
L L X Q0
L H X Q0
HXXZ
H = High Level, L = Low Level, X = Immaterial, Z = High Impedance
= Transition from Low to High Level
Q0 = The level of Q before the indicated input conditions were established
Spec Number 518629
695









No Preview Available !

HCTS574HMSR Даташит, Описание, Даташиты
Specifications HCTS574MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Rise and Fall Times at 4.5V VCC(TR, TF) . . . . . . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = 50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Three-State Output
Leakage Current
IOZ Applied Voltage = 0V or
VCC, VCC = 5.5V
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 40 µA
- 750 µA
7.2 - mA
6.0 - mA
-7.2 - mA
-6.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1
±50
-
V
V
µA
µA
µA
µA
-
Spec Number 518629
696










Скачать PDF:

[ HCTS574HMSR.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HCTS574HMSRRadiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge TriggeredIntersil Corporation
Intersil Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск