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MTB20N03AQ8 Datasheet Download - Cystech Electonics

Номер произв MTB20N03AQ8
Описание N-Channel LOGIC Level Enhancement Mode Power MOSFET
Производители Cystech Electonics
логотип Cystech Electonics логотип 



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MTB20N03AQ8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2009.04.29
Revised Date : 2012.03.01
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03AQ8 BVDSS
ID
30V
10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 23.6 mΩ(typ)
Description
The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free & Halogen-free package
Symbol
MTB20N03AQ8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB20N03AQ8
CYStek Product Specification







No Preview Available !

MTB20N03AQ8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2009.04.29
Revised Date : 2012.03.01
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=100 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
10.2
6.5
40 *1
10
5
1.6 *2
3.1
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-a
40 °C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
9
-
-
-
13.6
23.6
11
6.4
1.9
3
715
76
66
2.2
-
3.0
-
±100
1
25
18
29
-
-
-
-
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=8A
nA VGS=±20
μA VDS =24V, VGS =0
μA VDS =20V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=9A
mΩ VGS =4.5V, ID=7A
nC ID=9A, VDS=15V, VGS=10V
pF VGS=0V, VDS=15V, f=1MHz
Ω VGS=15mV, VDS=0V, f=1MHz
MTB20N03AQ8
CYStek Product Specification







No Preview Available !

MTB20N03AQ8 Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2009.04.29
Revised Date : 2012.03.01
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Dynamic
td(ON) *1, 2
-
7.5
-
tr *1, 2
-
12
-
td(OFF) *1, 2
-
21
-
tf *1, 2
-
7
-
ns
Source-Drain Diode Ratings and Characteristics
IS *1 - - 2.3
ISM *3 - - 9.2
VSD *1
- 0.78 1.2
trr - 50 -
A
V
ns
Qrr - 2 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=15V, ID=1A, VGS=10V,
RG=6Ω
IF=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Ordering Information
Device
MTB20N03AQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
MTB20N03AQ8
CYStek Product Specification










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