|
|
PDF MTB20N03AQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB20N03AQ8 | |
| Descripción | N-Channel LOGIC Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB20N03AQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2009.04.29
Revised Date : 2012.03.01
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03AQ8 BVDSS
ID
30V
10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 23.6 mΩ(typ)
Description
The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
Symbol
MTB20N03AQ8
Outline
Pin 1
SOP-8
G：Gate
D：Drain
S：Source
MTB20N03AQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2009.04.29
Revised Date : 2012.03.01
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
C oss
100
Crss
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
1
0.1
0.01
0.001
VDS=15V
VDS=10V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limite
10
100μs
1ms
10ms
1 100ms
1s
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
DC
100
0.8
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6 VDS=5V
4
140
2 ID=9A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
12
10
8
6
4
2 TA=25°C, VGS=10V, RθJA=40°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB20N03AQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB20N03AQ8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB20N03AQ8 | N-Channel LOGIC Level Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |