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APTGF100DA120T Datasheet Download - Advanced Power Technology

Номер произв APTGF100DA120T
Описание Boost chopper NPT IGBT Power Module
Производители Advanced Power Technology
логотип Advanced Power Technology логотип 



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APTGF100DA120T Даташит, Описание, Даташиты
APTGF100DA120T
Boost chopper
NPT IGBT Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
VBUS SENSE
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency
operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
150
100
300
±20
568
300A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGF100DA120T Даташит, Описание, Даташиты
APTGF100DA120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VCE(on) Collector Emitter on Voltage
VGE = 0V, IC = 750 µA
VGE = 0V
Tj = 25°C
VCE = 1200V Tj = 125°C
VGE =15V
Tj = 25°C
IC = 100A
Tj = 125°C
1200
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 2 mA
VGE = 20 V, VCE = 0V
4.5
Typ
3.2
4.0
Max
750
3750
3.7
6.5
150
Unit
V
µA
V
V
nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
6900
660
440
pF
VGS = 15V
VBus = 600V
IC = 100A
660
70 nC
400
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 2.5 W
35
65
320
ns
30
10.8 mJ
4.6
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 2.5 W
35
65
360
40
13.9
6.1
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
Tc = 70°C
Tj = 125°C
120
2.0 2.5
2.3
1.8
A
V
trr Reverse Recovery Time
IF = 120A
VR = 800V
di/dt =400A/µs
Tj = 25°C
Tj = 125°C
400
470
ns
Qrr Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt =400A/µs
Tj = 25°C
Tj = 125°C
2400
8000
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
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APTGF100DA120T Даташит, Описание, Даташиты
APTGF100DA120T
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
IGBT
Diode
M5
Min Typ Max Unit
0.22
0.46
°C/W
2500
V
-40 150
-40 125 °C
-40 100
4.7 N.m
160 g
Temperature sensor NTC
Symbol Characteristic
R25 Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT
=
R25
expêé
ë
B25
/
85
ççèæ
1
T25
-
1
T
÷÷øöúûù
T: Thermistor temperature
RT: Thermistor value at T
Package outline
Min Typ Max Unit
68 kW
4080
K
APT website – http://www.advancedpower.com
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