CEM9926A PDF даташит
Спецификация CEM9926A изготовлена «Chino-Excel Technology» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEM9926A |
Описание | Dual N-Channel Enhancement Mode Field Effect Transistor |
Производители | Chino-Excel Technology |
логотип |
4 Pages
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CEM9926A
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V.
RDS(ON) = 40mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 6
IDM 35
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 4. 2010.Dec
http://www.cetsemi.com
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CEM9926A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA 0.5
1.5 V
VGS = 4.5V, ID = 6A
21 27 mΩ
VGS = 2.5V, ID = 5.2A
32 40 mΩ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 8V, VGS = 0V,
f = 1.0 MHz
720 pF
130 pF
95 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 6A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
7 14 ns
34 68 ns
6 12 ns
6.8 8.8 nC
0.5 nC
1.8 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.7A
1.7 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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10
VGS=4.5,3.5,2.5V
VGS=2.0V
8
6
4
2
VGS=1.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750 Ciss
600
450
300
150
0
0
2
4
Coss
Crss
68
10
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM9926A
25
20
15
10
5 25 C
TJ=125 C
0
0.0 0.5 1.0 1.5
-55 C
2.0 2.5
3.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=6A
1.9 VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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Номер в каталоге | Описание | Производители |
CEM9926 | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
CEM9926A | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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