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CED61A3 PDF даташит

Спецификация CED61A3 изготовлена ​​​​«Chino-Excel Technology» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CED61A3
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители Chino-Excel Technology
логотип Chino-Excel Technology логотип 

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CED61A3 Даташит, Описание, Даташиты
CED61A3/CEU61A3
Jan. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 40A , RDS(ON)=13.5m@VGS=10V.
6 RDS(ON)=20m @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-251 & TO-252 package.
D
G
G
S
CEU SERIES
TO-252AA(D-PAK)
G
DS
CED SERIES
TO-251(l-PAK)
D
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
40
120
40
50
0.4
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
6-62
2.5
50
C/W
C/W









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CED61A3 Даташит, Описание, Даташиты
CED61A3/CEU61A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICSa
BVDSS VGS = 0V, ID=250µA
IDSS VDS = 30V, VGS = 0V
IGSS VGS = Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID 250µA
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 18A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSb
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
VDS = 10V, VGS = 10V
VDS = 10V, ID = 26A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 15V,
ID = 40A,
VGS = 10V
RGEN =24
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg VDS = 15V,ID = 40A
Qgs VGS = 5V
Qgd
6-63
Min TypC Max Unit
30 V
1 µA
Ć100 nA
1 3V
11 13.5 m
16.5 20 m
40
34
A
S
1200 PF
480 PF
130 PF
18 30 ns
25 50 ns
45 90 ns
75 130 ns
19 23 nC
5 nC
9 nC
4
6









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CED61A3 Даташит, Описание, Даташиты
CED61A3/CEU61A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 26A
6
Notes
a.Pulse Test:Pulse Widthś300ijs, Duty Cycleś 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.9 1.3 V
80
VGS=10,8,6,5,4V
60
40
VGS=3V
20
0
0 1234
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
1600
1200
Ciss
800
400
0
0
5 10 15
Coss
Crss
20 25
30
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
50
40 25 C
30
20
Tj=125 C
10
-55 C
01 2
34
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.8
VGS=10V
1.6
1.4
Tj=125 C
1.2
25 C
1.0
-55 C
0.8
0.6
0 10 20 30 40
ID, Drain Current(A)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
6-64










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