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2SC2769 PDF даташит
| Спецификация 2SC2769 изготовлена «INCHANGE» и имеет функцию, называемую «Silicon NPN Power Transistor». |
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Детали детали
| Номер произв | 2SC2769 |
| Описание | Silicon NPN Power Transistor |
| Производители | INCHANGE |
| логотип |  |
2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250 V
VCEO
Collector-Emitter Voltage
200 V
VCEO(SUS) Collector-Emitter Voltage
200 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5
100
150
-55~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.25 ℃/W
isc Product Specification
2SC2769
isc Website：www.iscsemi.cn
No Preview Available ! |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2769
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB=B 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO Collector Cutoff Current
VCB= 250V; IE=0
IEBO Emitter Cutoff Current
VEB= 7V; IC=0
hFE DC Current Gain
IC= 2A; VCE= 5V
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 6A , IB1= -IB2= 1.2A
RL= 10Ω;PW=20μs
Duty Cycle≤2%
MIN TYP. MAX UNIT
200 V
200 V
250 V
7V
0.2 V
1.1 V
0.1 mA
0.1 mA
20 60
0.8 μs
2.0 μs
0.5 μs
isc Website：www.iscsemi.cn
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