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даташит 2SD2256 PDF ( Datasheet )

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Номер произв 2SD2256
Описание Silicon NPN Triple Diffused
Производители Hitachi
логотип Hitachi логотип 



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2SD2256 Даташит, Описание, Даташиты
2SD2256
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1494
Features
High breakdown voltage and high current (VCEO = 120 V, IC = 25 A)
Built-in C-E diode
Outline
TO-3P
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
ADE-208-928 (Z)
1st. Edition
Sep. 2000
2
ID
3









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2SD2256 Даташит, Описание, Даташиты
2SD2256
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Ratings
120
120
7
25
35
120
150
–55 to +150
25
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
120
Collector to emitter breakdown V(BR)CEO
voltage
120
Collector to emitter sustain
voltage
VCEO(sus)
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test.
I CBO
I CEO
hFE1
hFE2
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
2000
500
Typ
Max Unit
—V
—V
—V
—V
10 µA
10 µA
20000
2.0 V
3.5 V
3.0 V
4.5 V
Test conditions
IC = 0.1 mA, IE = 0
IC = 25 mA, RBE =
IC = 200 mA, RBE =
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE =
VCE = 4 V, IC = 12 A*1
VCE = 4 V, IC = 25 A*1
IC = 12 A, IB = 24 mA*1
IC = 25 A, IB = 250 mA*1
IC = 12 A, IB = 24 mA*1
IC = 25 A, IB = 250 mA*1
2









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2SD2256 Даташит, Описание, Даташиты
Maximum Collector Dissipation Curve
120
80
40
0 50 100 150
Case temperature TC (°C)
2SD2256
Area of Safe Operation
100
iC(peak)
30
IC(max)
10
3
1.0
Ta = 25°C
0.3 1 shot pulse
0.1
3
10 30 100 300
Collector to emitter voltage VCE (V)
Typical Output Characteristics
20 4.03.5 3.0
16 TC = 25°C
2.5
2.0
12
1.5
8
4
1.0 mA
IB = 0
0 12345
Collector to emitter voltage VCE (V)
10,000
3,000
1,000
DC Current Transfer Ratio
vs. Collector Current
T C= 725–5°2°CC5°C
300
VCE = 4 V
100
30
10
0.1
0.3 1.0 3 10 30
Collector current IC (A)
100
3










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