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Номер произв 2SD2256
Описание Silicon NPN Darlington Power Transistor
Производители INCHANGE
логотип INCHANGE логотип 



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2SD2256 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2256
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120 V
VCEO Collector-Emitter Voltage
120 V
VEBO Emitter-Base Voltage
7V
IC Collector Current-Continuous
25 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
35 A
120 W
150
-55~150
isc Websitewww.iscsemi.cn









No Preview Available !

2SD2256 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2256
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA, RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA, IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 25A ,IB= 250mA
ICBO Collector Cutoff current
VCB= 100V, IE= 0
ICEO Collector Cutoff current
VCE= 100V, RBE=
hFE-1
DC Current Gain
IC= 12A ; VCE= 4V
hFE-2
DC Current Gain
IC= 25A ; VCE= 4V
MIN TYP. MAX UNIT
120 V
120 V
120 V
7V
2.0 V
3.5 V
3.0 V
4.5 V
10 μA
10 μA
2000
20000
500
isc Websitewww.iscsemi.cn










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