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2SD2256 PDF даташит
| Спецификация 2SD2256 изготовлена «INCHANGE» и имеет функцию, называемую «Silicon NPN Darlington Power Transistor». |
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Детали детали
| Номер произв | 2SD2256 |
| Описание | Silicon NPN Darlington Power Transistor |
| Производители | INCHANGE |
| логотип |  |
2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2256
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120 V
VCEO Collector-Emitter Voltage
120 V
VEBO Emitter-Base Voltage
7V
IC Collector Current-Continuous
25 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
35 A
120 W
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
No Preview Available ! |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2256
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA, IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 25A ,IB= 250mA
ICBO Collector Cutoff current
VCB= 100V, IE= 0
ICEO Collector Cutoff current
VCE= 100V, RBE= ∞
hFE-1
DC Current Gain
IC= 12A ; VCE= 4V
hFE-2
DC Current Gain
IC= 25A ; VCE= 4V
MIN TYP. MAX UNIT
120 V
120 V
120 V
7V
2.0 V
3.5 V
3.0 V
4.5 V
10 μA
10 μA
2000
20000
500
isc Website：www.iscsemi.cn
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