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PDF 2SD2693 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2693 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2693, 2SD2693A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1724, 2SB1724A
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings TC = 25°C
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SD2693 VCBO
2SD2693A
60
80
Collector-emitter voltage 2SD2693 VCEO
(Base open)
2SD2693A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
6
3
5
25
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD2693 VCEO IC = 30 mA, IB = 0 60 V
(Base open) *1
2SD2693A
80
Collector-base cutoff
current (Emitter open)
2SD2693A ICBO VCB = 80 V, IE = 0
100 mA
Collector-emitter cutoff
current (Base open)
Collector-emitter cutoff
current (E-B short)
2SD2693 ICEO
2SD2693A
2SD2693 ICES
VCE = 60 V, IB = 0
VCE = 80 V, IB = 0
VCE = 60 V, IB = 0
100 µA
100 µA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
IEBO
hFE1 *2
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
1 mA
70 250
Collector-emitter saturation voltage *1
hFE2
VCE(sat)
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
10
0.8 V
Transition frequency
fT VCE = 10 V, IC = 0.5 A, f = 10 MHz
30 MHz
Turn-on time
ton IC = 1 A, Resistance loaded
0.1 µs
Storage time
tstg IB1 = 0.1 A, IB2 = − 0.1 A
2.3 µs
Fall time
tf VCC = 50 V
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Publication date: September 2005
SJD00322BED
1
1 page | ||
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| PDF Descargar | [ Datasheet 2SD2693.PDF ] | |
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