(PDF) AP2310GG-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2310GG-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. AP2310GG-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 60V RDS(ON) 90mΩ ID 2.7A S D S SOT-89 D G Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 60 +20 2.7 2.2 10 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 100 Unit ℃/W 1 201010121 1 page

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PDF AP2310GG-HF Data sheet ( Hoja de datos )