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AP2N7002K-HF PDF даташит

Спецификация AP2N7002K-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP2N7002K-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP2N7002K-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP2N7002K-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Package Outline
D BVDSS
RDS(ON)
Surface Mount Device
RoHS Compliant & Halogen-Free
SOT-23S G
S
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The SOT-23S package is universally used for all commercial-industrial
applications.
G
60V
2Ω
450mA
D
S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60
+20
450
360
950
0.7
-55 to 150
-55 to 150
V
V
mA
mA
mA
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
180
Unit
/W
1
201512117









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AP2N7002K-HF Даташит, Описание, Даташиты
AP2N7002K-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=450mA
VGS=4.5V, ID=200mA
VDS=VGS, ID=250uA
VDS=10V, ID=450mA
VDS=48V, VGS=0V
VGS=+20V, VDS=0V
ID=450mA
VDS=50V
VGS=4.5V
VDS=30V
ID=450mA
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
60 - - V
- - 2Ω
- - 4Ω
1 - 2.5 V
- 400 - mS
- - 25 uA
- - +30 uA
- 1 1.6 nC
- 0.5 - nC
- 0.5 - nC
- 12 - ns
- 10 - ns
- 56 - ns
- 29 - ns
- 32 50 pF
- 8 - pF
- 6 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=450mA, VGS=0V
Min. Typ. Max. Units
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board t10sec; 400/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP2N7002K-HF Даташит, Описание, Даташиты
AP2N7002K-HF
1.0
T A =25 o C
10V
7.0V
0.8
5.0V
4.5V
0.6
V G = 3.0 V
0.4
0.2
0.0
0.0 2.0 4.0
V DS , Drain-to-Source Voltage (V)
6.0
Fig 1. Typical Output Characteristics
1.0
T A = 150 o C
0.8
0.6
0.4
10V
7.0V
5.0V
4.5V
V G = 3.0 V
0.2
0.0
0246
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0 2.0
I D = 200m A
I D = 450m A
2.5
T A =25 o C
V G =10V
1.5
.2.0
1.0
1.5
1.0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
0.6
0.5
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.7
150
0.4
T j =150 o C
0.2
T j =25 o C
1.3
0.9
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0.5
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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