(PDF) AP2N7002K Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2N7002K
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP2N7002K Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant Description D SOT-23 G S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID G 60V 2Ω 640mA D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 60 ±20 640 500 950 1.38 0.01 -55 to 150 -55 to 150 Units V V mA mA mA W W/℃ ℃ ℃ Max. Value 90 Unit ℃/W Data and specifications subject to change without notice 200209062-1/4 1 page

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PDF AP2N7002K Data sheet ( Hoja de datos )