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AP75N07AGP PDF даташит

Спецификация AP75N07AGP изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP75N07AGP
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP75N07AGP Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP75N07AGP
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
G
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
75V
11mΩ
80A
G
D
S
TO-220(P)
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V4
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
75
+30
80
70
320
300
450
-55 to 175
-55 to 175
Value
0.5
62
Units
V
V
A
A
A
W
mJ
Units
/W
/W
Data & specifications subject to change without notice
1
200902093









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AP75N07AGP Даташит, Описание, Даташиты
AP75N07AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=15V, ID=40A
Drain-Source Leakage Current
VDS=75V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=60V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+30V, VDS=0V
ID=40A
Gate-Source Charge
VDS=60V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDD=40V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=1.33Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
75 -
--
2-
- 78
--
--
--
- 100
- 13
- 47
- 15
- 83
- 67
- 86
- 3220
- 650
- 220
- 3.3
Max.
-
11
4
-
10
250
+100
160
-
-
-
-
-
-
5150
-
-
5
Units
V
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
Tj=25, IS=40A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 80 - ns
- 235 -
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 108A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP75N07AGP Даташит, Описание, Даташиты
280
T C = 25 o C
240
200
10V
9 .0 V
8 .0V
7.0 V
160
120
80 V G = 5 .0V
40
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
18
I D =40A
T C =25 o C
16
14
12
10
8
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =175 o C
20
T j =25 o C
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP75N07AGP
160
T C = 175 o C
120
10V
9 .0 V
8 .0V
7.0 V
80
V G = 5 .0V
40
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =40A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
200
1.2
1.0
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3










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