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AON7548 PDF даташит

Спецификация AON7548 изготовлена ​​​​«Alpha & Omega Semiconductors» и имеет функцию, называемую «30V N-Channel MOSFET».

Детали детали

Номер произв AON7548
Описание 30V N-Channel MOSFET
Производители Alpha & Omega Semiconductors
логотип Alpha & Omega Semiconductors логотип 

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AON7548 Даташит, Описание, Даташиты
AON7548
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
30V
24A
< 8.8m
< 14m
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
24
19
90
14
11
28
39
23
9
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4.5
Max
40
75
5.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2012
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AON7548 Даташит, Описание, Даташиты
AON7548
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.3 1.8 2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
VGS=10V, ID=20A
7.3 8.8
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
10.8 13.4
VGS=4.5V, ID=15A
11.2 14
gFS Forward Transconductance
VDS=5V, ID=20A
60
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
24
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1086
436
34
1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.6 22 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11A
6.9 9.7 nC
2.9 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
16 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=100A/µs
24.5 ns
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
11.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2012
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AON7548 Даташит, Описание, Даташиты
AON7548
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
60
40
4.5V
4V
3.5V
20
VGS=3V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
50
VDS=5V
40
30
20
125°C
10
25°C
0
1 1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
15
VGS=4.5V
12
9
6 VGS=10V
3
1.6
VGS=10V
ID=20A
1.4
1.2 VGS=4.5V
ID=15A
1
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistan(cNeotvesE. J) unction1T8emperature
40
35 ID=20A
30
25
20
15 125°C
10
5
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
1.2
Rev 0: April 2012
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