HAF2007S PDF даташит
Спецификация HAF2007S изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel MOS FET Series Power Switching». |
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Детали детали
Номер произв | HAF2007S |
Описание | Silicon N Channel MOS FET Series Power Switching |
Производители | Hitachi Semiconductor |
логотип |
6 Pages
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HAF2007(L), HAF2007(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-706 (Z)
1st. Edition
Dec. 1998
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
DPAK–2
2, 4
D
1
G Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
3
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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HAF2007(L), HAF2007(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Ratings
60
(16)
(–2.5)
5
10
5
20
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Item
Symbol Min Typ Max Unit Test Conditions
Input voltage
Input current
(Gate non shut down)
Input current
(Gate non shut down)
Shut down temperature
Gate operation voltage
VIH
VIL
I IH1
I IH2
I IL
I IH(sd)1
I IH(sd)2
Tsd
Vop
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, VDS = 0
— — 50 µA Vi = 3.5V, VDS = 0
—— 1
µA Vi = 1.2V, VDS = 0
— 0.8 — mA Vi = 8V, VDS = 0
— 0.35 — mA Vi = 3.5V, VDS = 0
— 175 — °C Channel temperature
3.5 — 12 V
2
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HAF2007(L), HAF2007(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
I D1
Drain current
I D2
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS1
I GSS2
I GSS3
I GSS4
Input current (shut down)
I GS(op)1
I GS(op)2
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)
(5) —
——
60 —
(16) —
(–2.5) —
——
——
——
——
— 0.8
— 0.35
——
1.0 —
— 100
—
10
—
—
—
100
50
1
–100
—
—
10
2.25
160
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
mΩ
VGS = 3.5V, VDS = 2V
VGS = 1.2V, VDS = 2V
ID = 10mA, VGS = 0
IG = (300µA), VDS = 0
IG = (–100µA), VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VGS = 1.2V, VDS = 0
VGS = –2.4V, VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 2.5A, VGS = 4V Note3
Static drain to source on state
resistance
RDS(on)
—
70 100 mΩ ID = 2.5A, VGS = 10V Note3
Forward transfer admittance
Output capacitance
|yfs|
Coss
(5)
—
(18) —
(260) —
S ID = 2.5A, VDS = 10V Note3
pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
td(on) — ( ) — µs ID = 2.5A, VGS = 5V
Rise time
tr — ( ) — µs RL = 12Ω
Turn-off delay time
td(off) — ( ) — µs
Fall time
tf — ( ) — µs
Body–drain diode forward voltage VDF
— (1.0) — V
IF = 2.5A, VGS = 0
Body–drain diode reverse
recovery time
trr — ( ) — ns IF = 5A, VGS = 0
diF/ dt =50A/µs
Over load shut down
tos1 — ( ) — ms VGS = 5V, VDD = 12V
operation time Note4
tos2 — ( ) — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.
3
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Номер в каталоге | Описание | Производители |
HAF2007 | Silicon N Channel MOS FET Series Power Switching | Hitachi Semiconductor |
HAF2007L | Silicon N Channel MOS FET Series Power Switching | Hitachi Semiconductor |
HAF2007S | Silicon N Channel MOS FET Series Power Switching | Hitachi Semiconductor |
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