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HAF2011L PDF даташит

Спецификация HAF2011L изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel MOS FET Series Power Switching».

Детали детали

Номер произв HAF2011L
Описание Silicon N Channel MOS FET Series Power Switching
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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HAF2011L Даташит, Описание, Даташиты
HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-738 (Z)
1st. Edition
Jan. 1999
Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain









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HAF2011L Даташит, Описание, Даташиты
HAF2011(L),HAF2011(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10µs, duty cycle 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate non shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
I IH1
I IH2
I IL
I IH(sd)1
I IH(sd)2
Tsd
VOP
Min
3.5
3.5
Typ
0.8
0.35
175
Ratings
60
16
–2.5
40
80
40
50
150
–55 to +150
Max Unit
—V
1.2 V
100 µA
50 µA
1 µA
— mA
— mA
°C
12 V
Unit
V
V
V
A
A
A
W
°C
°C
Test Conditions
Vi = 8V, VDS = 0
Vi = 3.5V, VDS = 0
Vi = 1.2V, VDS = 0
Vi = 8V, VDS = 0
Vi = 3.5V, VDS = 0
Channel temperature
2









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HAF2011L Даташит, Описание, Даташиты
HAF2011(L),HAF2011(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
I D1
(25) — — A
VGS = 3.5V, VDS = 2V
Drain current
ID2 — — 10 mA VGS = 1.2V, VDS = 2V
Drain to source breakdown V(BR)DSS
60
V
voltage
ID = 10mA, VGS = 0
Gate to source breakdown V(BR)GSS
(16) —
V
voltage
IG = (300µA), VDS = 0
Gate to source breakdown V(BR)GSS
(–2.5) —
V
voltage
IG = (–100µA), VDS = 0
Gate to source leak current IGSS1
100 µA
VGS = 8V, VDS = 0
I GSS2
— — 50 µA VGS = 3.5V, VDS = 0
I GSS3
—— 1
µA VGS = 1.2V, VDS = 0
I GSS4
–100 µA
VGS = –2.4V, VDS = 0
Input current (shut down)
I GS(op)1
0.8 —
mA VGS = 8V, VDS = 0
IGS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0
Zero gate voltege drain
current
I DSS
250 µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0 —
— 25
2.25 V
33 m
ID = 1mA, VDS = 10V
ID = 20A, VGS = 4V Note3
Static drain to source on state RDS(on) — 15 20 mID = 20A, VGS = 10V Note3
resistance
Forward transfer admittance |yfs|
Output capacitance
Coss
25 50 —
— 940 —
S ID = 20A, VDS = 10V Note3
pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
— (7.8) — µs ID = 5A, VGS = 5V
— (64) — µs RL = 6
— (19) — µs
— (30) — µs
— (0.85) — V
IF = 40A, VGS = 0
Body–drain diode reverse
recovery time
t rr
— ( ) — ns IF = 40A, VGS = 0
diF/ dt =50A/µs
Over load shut down tos1 — ( ) — ms VGS = 5V, VDD = 12V
operation time Note4
tos2 — ( ) — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
3










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Номер в каталогеОписаниеПроизводители
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