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PDF HAF70009 Data sheet ( Hoja de datos )
| Número de pieza | HAF70009 | |
| Descripción | 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HAF70009
August 1999
File Number 4770
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Ordering Information
PART NUMBER
HAF70009
PACKAGE
TO-220AB
TEMP. RANGE (oC)
-55 to 175
Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
HAF70009
100
100
±20
56
Figure 4
Figures 6, 14, 15
200
1.35
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999. SABER© is a Copyright of Analogy, Inc.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1 page  
HAF70009
Typical Performance Curves (Continued)
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
3000
2500
2000
1500
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1000
500
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 56A
ID = 37A
VDD = 50V
ID = 18A
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
4-5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAF70009.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HAF70009 | 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET | Intersil Corporation |
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