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Номер произв AP02N90I-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 



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AP02N90I-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N90I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D
Isolation Full Package
Fast Switching Characteristics
RoHS Compliant & Halogen-Free
G
S
Description
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies, AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
900V
7.2
1.9A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
+30
1.9
1.2
6
34.7
0.28
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.6
62
Units
/W
/W
Data & specifications subject to change without notice
1
201309063









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AP02N90I-HF Даташит, Описание, Даташиты
AP02N90I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.85A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=1.9A
Drain-Source Leakage Current
VDS=900V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=1.9A
Gate-Source Charge
VDS=540V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=450V
Rise Time
ID=1.9A
Turn-off Delay Time
RG=10
Fall Time
VGS=10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
900 - - V
- 0.8 - V/
- - 7.2
2 - 4V
-2-S
- - 10 uA
- - 100 uA
- - +100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25, IAS=1.9A.
3.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP02N90I-HF Даташит, Описание, Даташиты
2.0
T C =25 o C
1.6
1.2
10V
8.0V
6.0V
5.0V
0.8
V G =4.5V
0.4
0.0
0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
-50 0
50 100 150
Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.0
1.5
T j =150 o C
1.0
T j =25 o C
0.5
0.0
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP02N90I-HF
1.25
T C =150 o C
1.00
0.75
10V
8.0V
6.0V
5.0V
V G =4.5V
0.50
0.25
0.00
0
3 6 9 12 15
V DS , Drain-to-Source Voltage (V)
18
Fig 2. Typical Output Characteristics
2.8
2.4
I D = 0.85 A
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
-50 0
50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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