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Номер произв AP02N90H-HF-3
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 



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AP02N90H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N90H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
Low On-resistance
RoHS-compliant, Halogen-free
G
D
S
BV DSS
RDS(ON)
ID
900V
7.2
1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H)
The AP02N90H-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP02N90J-HF-3) is
available where a small PCB footprint is required.
GD
S
Absolute Maximum Ratings
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
± 30
1.9
1.2
6
62.5
0.5
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
2
62.5
110
Unit
°C/W
°C/W
°C/W
Ordering Information
AP02N90H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP02N90J-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201008115-3 1/6









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AP02N90H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N90H/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.85A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=1.9A
Drain-Source Leakage Current
VDS=900V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=±30V, VDS=0V
ID=1.9A
Gate-Source Charge
VDS=540V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=450V
Rise Time
ID=1.9A
Turn-off Delay Time
RG=10,VGS=10V
Fall Time
RD=236
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
900 -
- 0.8
--
2-
-V
- V/°C
7.2
4V
-2-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Starting Tj=25oC, VDD=50V, L=10mH, RG=25, IAS=1.9A.
3.Pulse width <300us , duty cycle <2%.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6









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AP02N90H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
2.0
T C =25 o C
1.6
10V
8.0V
6.0V
5.0V
1.2
0.8
V G =4.5V
0.4
0.0
0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
-50 0 50 100
Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS
vs. Junction Temperature
2.0
1.5
T j =150 o C
1.0
T j =25 o C
0.5
0.0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP02N90H/J-HF-3
1.25
T C =150 o C
1.00
0.75
10V
8.0V
6.0V
5.0V
V G =4.5V
0.50
0.25
0.00
0
3 6 9 12 15
V DS , Drain-to-Source Voltage (V)
18
Fig 2. Typical Output Characteristics
2.8
I D = 0.85 A
2.4
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
1.2
0.8
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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