(PDF) HAT1016R Datasheet - Silicon P Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT1016R
Descripción	Silicon P Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-471 D (Z) 5th. Edition February 1999 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page HAT1016R 1000 500 200 100 50 Body–Drain Diode Reverse Recovery Time di / dt = 20 A / µs VGS = 0, Ta = 25 °C 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 00 VDD = –5 V –10 V –10 –25 V –4 –20 V GS V DS –30 V DD = –25 V –10 V –40 –5 V –50 I D = –4.5 A 0 8 16 24 32 Gate Charge Qg (nc) –8 –12 –16 –20 40 Reverse Drain Current vs. Source to Drain Voltage –20 –16 VGS = –5 V –12 0, 5 V –8 –4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5 5 Page

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