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Número de pieza | HAT1021R | |
Descripción | Silicon P Channel Power MOS FET High Speed Power Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1021R (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! HAT1021R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-475 D (Z)
5th. Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
1 page HAT1021R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 di / dt = 20 A / µs
5 VGS = 0, Ta = 25 °C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30 VGS = 0
10 f = 1 MHz
0 –4 –8 –12 -16 –20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
V DD= –5 V
–10 V
–10
–20 V
–2
–20 V DS
V GS
–30
V DD = –20 V
–10 V
–40 –5 V
–50 I D = –5.5 A
0 8 16 24 32
Gate Charge Qg (nc)
–4
–6
–8
–10
40
Switching Characteristics
500
t d(off)
200
100 t r
tf
50
t d(on)
20
10 V GS = –4 V, V DD = –10 V
5 PW = 3 µs, duty < 1 %
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet HAT1021R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1021 | Silicon P Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
HAT1021R | Silicon P Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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