(PDF) HAT1025R Datasheet - Silicon P Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT1025R
Descripción	Silicon P Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline ADE-208-437 H (Z) 9th. Edition February 1999 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page HAT1025R Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di / dt = 20 A / µs VGS = 0, Ta = 25 °C 5 –0.2 –0.5 –1 –2 –5 –10 –20 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 –4 –8 –12 –16 –20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 00 VDD = –5 V –10 V –10 –20 V –2 –20 V DS –30 V DD = –20 V –10 V –5 V –40 V GS –4 –6 –8 –50 0 I D = –4.5 A –10 4 8 12 16 Gate Charge Qg (nc) 20 Reverse Drain Current vs. Souece to Drain Voltage –20 –16 VGS = –5 V –12 0, 5 V –8 –4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5 5 Page

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PDF HAT1025R Data sheet ( Hoja de datos )