(PDF) HAT1029R Datasheet - Silicon P Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT1029R
Descripción	Silicon P Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT1029R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline ADE-208-522 (Z) 1st. Edition May 1997 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 –0.4 –0.3 –0.2 I D = –2 A –0.1 –1 A –0.5 A 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) HAT1029R Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 0.05 VGS = –2.5 V –4 V 0.02 0.01 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 Static Drain to Source on State Resistance vs. Temperature 0.5 0.4 I D = –2 A 0.3 –1 A –0.5 A 0.2 VGS = –2.5 V 0.1 –2 A, –1 A, –0.5 A –4 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 5 2 25 °C 1 75 °C 0.5 0.2 –0.1 –0.2 –0.5 –1 Drain Current V DS = –10 V Pulse Test –2 –5 –10 I D (A) 5 5 Page

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PDF HAT1029R Data sheet ( Hoja de datos )