HAT1036R PDF даташит
Спецификация HAT1036R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon P Channel Power MOS FET Power Switching». |
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Детали детали
Номер произв | HAT1036R |
Описание | Silicon P Channel Power MOS FET Power Switching |
Производители | Hitachi Semiconductor |
логотип |
9 Pages
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HAT1036R
Silicon P Channel Power MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 11 mΩ typ
• Capable of -4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-662D (Z)
5th. Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
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HAT1036R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
-30
±20
-12
-96
-12
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
-30
—
—
-1.0
—
—
12
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 1. Pulse test
Typ
—
—
—
—
11
21
20
4200
870
360
70
12
14
120
350
100
120
-0.85
55
Max
—
±0.1
-1
-2.5
14
34
—
—
—
—
—
—
—
—
—
—
—
-1.11
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = -10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = -30 V, VGS = 0
VDS = -10 V, I D = -1 mA
ID = -6 A, VGS = -10 V Note1
ID = -6 A, VGS = -4 V Note1
ID = -6 A, VDS = -10 V Note1
VDS = -10 V
VGS = 0
f = 1 MHz
VDD = -10 V
VGS = -10 V
ID = -12 A
VGS = -4 V, ID = -6 A
VDD ≅ -10 V
IF = -12 A, VGS = 0 Note1
IF = -12 A, VGS = 0
diF/ dt = 20 A/ µs
2
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Main Characteristics
HAT1036R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
-500
-100
-10
-1
-0.1
10 µs
OthpiseararetioaDnCisOinperationP(WPW=<1110N0om1mts0es)s04µs
limited by R DS(on)
Ta = 25 °C
-0.01 1 shot Pulse
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
-50 -10V
-4 V
-40 -5 V
Pulse Test
-30
-3.5 V
-20
-10
VGS = -3 V
0 -2 -4 -6 -8 -10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
-50
V DS = -10 V
Pulse Test
-40
-30
-20
-10
Tc = 75°C
25°C
–25°C
0 -1 -2 -3 -4 -5
Gate to Source Voltage V GS (V)
3
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Номер в каталоге | Описание | Производители |
HAT1036R | Silicon P Channel Power MOS FET Power Switching | Hitachi Semiconductor |
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