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Número de pieza | HAT1038R | |
Descripción | Silicon P Channel Power MOS FET High Speed Power Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1038R (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
ADE-208-663C (Z)
4th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
1 page HAT1038R/HAT1038RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
–0.1
I D = –2 A
–1 A
–0.5 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30
Drain Current I D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2 VGS = –4 V
I D = –2 A
–1 A
–0.5 A
–2 A
0.1
–10 V
–0.5, –1 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
V DS = 10 V
10 Pulse Test
Ta = –25 °C
5
25 °C
2 75 °C
1
0.5
0.2
–0.1 –0.2 –0.5 –1 –2
–5
Drain Current I D (A)
–10
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HAT1038R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1038R | Silicon P Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
HAT1038RJ | Silicon P Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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