HAT1043M PDF даташит
Спецификация HAT1043M изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon P Channel Power MOS FET Power Switching». |
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Детали детали
Номер произв | HAT1043M |
Описание | Silicon P Channel Power MOS FET Power Switching |
Производители | Hitachi Semiconductor |
логотип |
9 Pages
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HAT1043M
Silicon P Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• 2.5 V gate drive device can be driven from 3 V source
Outline
ADE-208-754D (Z)
5th Edition
February 1999
TSOP–6
12 5 6
DD D D
3
G
S
4
4
5
6
3
2
1
4 Source
3 Gate
1, 2, 5, 6 Drain
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HAT1043M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
VDSS
VGSS
ID
I Note 1
D(pulse)
I Note 2
DR
Pch Note 2
(pulse)
Pch Note 3
(continuous)
Tch
–20
±12
–4.4
–17.6
–4.4
2.0
1.05
150
V
V
A
A
A
W
W
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
–20
—
—
–0.4
—
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
4
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total Gate charge
Qg —
Gate to Source charge
Qgs —
Gate to Drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 1. Pulse test
Typ
—
—
—
—
55
85
7
750
310
220
11
2
3.5
15
100
85
100
–0.95
50
Max
—
±0.1
–1
–1.4
65
110
—
—
—
—
—
—
—
—
—
—
—
–1.23
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = –20 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –4.5 V Note 1
ID = –3 A, VGS = –2.5 V Note 1
ID = –3 A, VDS = –10 V Note 1
VDS = –10 V
VGS = 0
f = 1 MHz
VDD = –10 V
VGS = –4.5 V
ID= –4.4 A
VGS = –4.5 V, ID = –3 A
RL = 3.3 Ω
IF = –4.4 A, VGS = 0
IF = –4.4 A, VGS = 0
diF/ dt = –20 A/ µs
2
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Main Characteristics
Power vs. Temperature Derating
2.0
1.5
1.0
0.5
0 50 100 150 200
Ambient Temperature Ta (°C)
Test Condition
When using the alumina ceramic board
(50x50x0.7mm),(PW ≤ 5s)
HAT1043M
-100
Maximum Safe Operation Area
-30 10 µs
-10
-3
-1
-0.3
-0.1
DC
PW
Operation=(P1W0 ms
1 ms
(1 shot)
Operation in
this area is
limited by R DS(on)
≤ 5s)
Note1
100 µs
-0.03 Ta = 25°C
1 shot pulse
-0.01
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V DS (V)
Note 1 When using the alumina ceramic board
( 50x50x0.7mm)
Typical Output Characteristics
-10
-10 V
-4 V
-8
-3 V
-2.5 V
-6
Pulse Test
-2 V
-4
-2
VGS = -1.5 V
0 -2 -4 -6 -8 -10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
-10
V DS = -10 V
Pulse Test
-8
-6
-4
-2
75°C
Tc = –25°C
25°C
0 -1 -2 -3 -4 -5
Gate to Source Voltage V GS (V)
3
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Номер в каталоге | Описание | Производители |
HAT1043 | Silicon P Channel Power MOS FET Power Switching | Hitachi Semiconductor |
HAT1043M | Silicon P Channel Power MOS FET Power Switching | Hitachi Semiconductor |
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