(PDF) HAT2016R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2016R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de HAT2016R (archivo pdf) en la parte inferior de esta página. Total 10 Páginas
No Preview Available ! HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-438 H (Z) 9th. Edition June 1997 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page HAT2016R Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 0.2 I D = 5 A 0.1 2 A 1A 0 2 4 6 8 10 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 V GS = 4 V 0.02 10 V 0.01 0.005 0.2 0.5 1 2 5 10 20 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 I D = 1 A, 2 A, 5 A 0.06 V GS = 4 V 0.04 0.02 0 –40 10 V 1 A, 2 A, 5 A 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 5 75 °C 2 25 °C 1 0.5 0.2 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet HAT2016R.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF HAT2016R Data sheet ( Hoja de datos )