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What is HAT2019R?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Silicon N Channel Power MOS FET High Speed Power Switching".


HAT2019R Datasheet PDF - Hitachi Semiconductor

Part Number HAT2019R
Description Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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Total 9 Pages



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HAT2019R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
ADE-208-481 D (Z)
5th. Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

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HAT2019R equivalent
HAT2019R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 di/dt = 20 A/µs
5 VGS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
I D= 8 A
40
V DD = 5 V
10 V
30
VDS
25 V
20
VGS
10
8
6
4
10
V DD = 25 V
2
10 V
5V 0
0 8 16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
tr
tf
t d(off)
50
20
10
5
0.2
t d(on)
VGS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
0.5 1 2
5 10 20
Drain Current I D (A)
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT2019R electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HAT2019RThe function is Silicon N Channel Power MOS FET High Speed Power Switching. Hitachi SemiconductorHitachi Semiconductor

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