HAT2022R PDF даташит
Спецификация HAT2022R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | HAT2022R |
Описание | Silicon N Channel Power MOS FET High Speed Power Switching |
Производители | Hitachi Semiconductor |
логотип |
9 Pages
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HAT2022R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-440 J (Z)
11th Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
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HAT2022R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
30
± 20
11
88
11
2.5
Channel temperature
Tch 150
Storage temperature
Tstg – 55 to + 150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
30
± 20
—
—
1.0
—
—
12
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 3. Pulse test
Typ
—
—
—
—
—
0.012
0.017
18
1450
950
380
60
450
80
160
0.8
70
Max
—
—
± 10
10
2.0
0.015
0.025
—
—
—
—
—
—
—
—
1.3
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 6 A, VGS = 10 V Note3
ID = 6 A, VGS = 4 V Note3
ID = 6 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 6 A
VDD ≅ 10 V
IF = 11 A, VGS = 0 Note3
IF = 11 A, VGS = 0
diF/ dt = 20 A/µs
2
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Main Characteristics
HAT2022R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
PW 1 ms
DC Operation
Operation in
this area is
= 10 ms
(PW < 1N0oste) 4
0.1 limited by R DS(on)
100 µs
0.03 Ta = 25 °C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V 4 V
6V
40 Pulse Test
5V
4.5 V
30
3.5 V
20
10 3 V
VGS = 2.5 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
20
V DS = 10 V
Pulse Test
16
12
25°C
8
Tc = 75°C
–25°C
4
0 1 23 45
Gate to Source Voltage V GS (V)
3
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Номер в каталоге | Описание | Производители |
HAT2022R | Silicon N Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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