HAT2026R PDF даташит
Спецификация HAT2026R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | HAT2026R |
Описание | Silicon N Channel Power MOS FET High Speed Power Switching |
Производители | Hitachi Semiconductor |
логотип |
9 Pages
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HAT2026R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-523 C (Z)
4th. Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
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HAT2026R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
20
± 12
11
88
11
2.5
Channel temperature
Tch 150
Storage temperature
Tstg – 55 to + 150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min Typ
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
20
± 12
—
—
0.4
—
—
18
—
—
—
—
—
—
0.011
0.014
27
1760
Output capacitance
Coss —
1130
Reverse transfer capacitance
Crss —
450
Turn-on delay time
td(on) — 35
Rise time
tr — 275
Turn-off delay time
td(off) — 300
Fall time
tf — 340
Body–drain diode forward voltage VDF — 0.83
Body–drain diode reverse
recovery time
trr — 75
Note: 3. Pulse test
The specifications may be change without notice.
Max
—
—
± 10
1
1.4
0.015
0.021
—
—
—
—
—
—
—
—
1.08
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 6 A, VGS = 4 V Note3
ID = 6 A, VGS = 2.5 V Note3
ID = 6 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 6 A
VDD ≅ 10 V
IF = 11 A, VGS = 0 Note3
IF = 11 A, VGS = 0
diF/ dt = 20 A/µs
2
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Main Characteristics
HAT2026R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30 PW 1 ms
10
3
1
0.3
DC Operation
Operation in
this area is
= 10 ms
(PW < 1N0oste) 4
limited by R DS(on)
100 µs
0.1
0.03 Ta = 25 °C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V Pulse Test
5V
40 4 V
3V
2.5 V
30
2V
20
10
VGS = 1.5 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
V DS = 10 V
Pulse Test
40
30
20
75°C
10
Tc = –25°C
25°C
0 1 23 45
Gate to Source Voltage V GS (V)
3
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Номер в каталоге | Описание | Производители |
HAT2026R | Silicon N Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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