(PDF) HAT2027R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switchin

Número de pieza	HAT2027R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switchin
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2027R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline ADE-208-458 E (Z) 6th. Edition February 1999 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 1 page HAT2027R Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di/dt = 20 A/µs 5 VGS = 0, Ta = 25°C 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 10000 3000 1000 300 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss Crss 30 10 0 4 8 12 16 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D= 7 A 40 V DD = 5 V 10 V 30 20 V VDS 20 VGS 10 8 6 4 10 V DD = 20 V 2 10 V 5V 0 0 4 8 12 16 20 Gate Charge Qg (nc) Reverse Drain Current vs. Souece to Drain Voltage 50 Pulse Test 40 VGS = 5 V 30 0, –5 V 20 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 5 5 Page

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PDF HAT2027R Data sheet ( Hoja de datos )