HAT2028R PDF даташит
Спецификация HAT2028R изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel Power MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | HAT2028R |
Описание | Silicon N Channel Power MOS FET High Speed Power Switching |
Производители | Hitachi Semiconductor |
логотип |
10 Pages
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HAT2028R/HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
ADE-208-524C (Z)
4th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
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HAT2028R/HAT2028RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT2028R
HAT2028RJ
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note4
AP
60
± 20
4
32
4
—
4
V
V
A
A
A
—
A
Avalanche energy
HAT2028R
HAT2028RJ
E Note4
AR
—
1.37
—
mJ
Channel dissipation
Pch Note2
2
W
Channel dissipation
Pch Note3
3
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
2
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HAT2028R/HAT2028RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdownvoltage
V(BR)DSS
Gate to source breakdownvoltage
V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltage
HAT2028R IDSS
drain current
HAT2028RJ IDSS
Zero gate voltage
HAT2028R IDSS
drain current
HAT2028RJ IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance RDS(on)
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
60
± 20
—
—
—
—
—
1.3
—
—
3.3
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forwardvoltage
Body–drain diode reverse recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 5. Pulse test
Typ
—
—
—
—
—
—
—
—
0.08
0.12
5
280
150
55
15
100
35
45
0.88
40
Max
—
—
± 10
1
0.1
—
10
2.3
0.1
0.16
—
—
—
—
—
—
—
—
1.15
—
Unit
V
V
µA
µA
µA
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 16 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0
Ta = 125°C
VDS = 10 V, I D = 1 mA
ID = 2 A, VGS = 10 V Note5
ID = 2 A, VGS = 4 V Note5
ID = 2 A, VDS = 10 V Note5
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 2 A
VDD ≅ 30 V
IF = 4 A, VGS = 0 Note5
IF = 4 A, VGS = 0
diF/ dt = 50 A/µs
3
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Номер в каталоге | Описание | Производители |
HAT2028R | Silicon N Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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