(PDF) HAT2031T Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2031T
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2031T Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline ADE-208-529F (Z) 7th. Edition February 1999 TSSOP–8 1 D 87 6 5 8 123 4 D 45 GG SS 23 MOS1 SS 67 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate 1 page Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 5 0.1 di/dt = 20 A/µs VGS = 0, Ta = 25°C 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) HAT2031T 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 1000 300 Ciss 100 Coss 30 Crss 10 0 10 20 30 40 50 Drain to Source Voltage VDDSS (V) Dynamic Input Characteristics 50 10 I D = 3.5 A 40 V DD = 5 V 10 V 30 20 V 20 VDS 8 6 VGS 4 10 V DD = 20 V 2 10 V 5V 0 0 2 4 6 8 10 Gate Charge Qg (nc) 1000 500 Switching Characteristics VGS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 % 200 100 t f 50 t r t d(off) 20 10 0.1 t d(on) 0.2 0.5 1 Drain Current 25 I D (A) 10 5 5 Page

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PDF HAT2031T Data sheet ( Hoja de datos )